Robust, Transparent Hybrid Thin Films of Phase-Change Material Sb₂S₃ Prepared by Electrophoretic Deposition

Photoelectrochemical Characterization of Dye- Modified ZnO Hybrid Thin Films Prepared by Electrochemical Deposition

Potential phase control of chromium oxide thin films prepared by laser-initiated organometallic chemical vapor deposition

We have used laser-initiated chemical vapor deposition to grow the chromium oxide thin films through the oxidation of Cr~CO!6 in an oxygen environment. While both Cr2O3 and CrO2 are present in the film, the relative weight of each phase depends on the oxygen partial pressure. The Curie temperature of the film increases and approaches the bulk TC of CrO2 ~397 K! as the partial oxygen pressure is...

Characteristics of silicon oxide thin films prepared by sol electrophoretic deposition method using tetraethylorthosilicate as the precursor

Silicon dioxide films were prepared on p-type Si (100) substrates by sol electrophoretic deposition (EPD) using tetraethylorthosilicate (TEOS) at low temperature. According to the variation of sol dipping conditions, we estimated the characteristics of SiO2 films, such as composition, surface morphology, wet etch rate, breakdown voltage, etc. The growth rate of the film increased linearly with ...

Effect of growth time on ZnO thin films prepared by low temperature chemical bath deposition on PS substrate

ZnO thin films were successfully synthesized on a porous silicon (PS) substrate by chemical bathdeposition method. X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM),and photoluminescence (PL) analyses were carried out to investigate the effect of growth duration(3, 4, 5, and 6 h) on the optical and structural properties of the aligned ZnO nanorods. T...

Structural, Electrical and Optical Properties of Molybdenum Oxide Thin Films Prepared by Post-annealing of Mo Thin Films

Molybdenum thin films with 50 and 150 nm thicknesses were deposited on silicon substrates, using DC magnetron sputtering system, then post-annealed at different temperatures (200, 325, 450, 575 and 700°C) with flow oxygen at 200 sccm (standard Cubic centimeter per minute). The crystallographic structure of the films was obtained by means of x-ray diffraction (XRD) analysis. An atomic force micr...